2N4398
2N4399
2N5745
PNP SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4398 series
types are PNP silicon power transistors designed for
power amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
2N4398
2N4399
2N5745
VCBO
40
60
80
VCEO
40
60
80
VEBO
5.0
5.0
5.0
IC
30
30
20
ICM
50
IB
7.5
IBM
15
PD
200
PD
5.0
TJ, Tstg
-65 to +200
JA
35
JC
0.875
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N4398
2N4399
2N5745
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
MIN MAX
ICBO
VCB=Rated VCBO
1.0
1.0
1.0
ICEX
VCE=Rated VCEO, VEB=1.5V
5.0
5.0
5.0
ICEX
VCE=30V, VEB=1.5V, TC=150°C
10
10
ICEX
VCE=80V, VEB=1.5V, TC=150°C
10
ICEO
VCE=Rated VCEO
5.0
5.0
5.0
IEBO
VEB=5.0V
5.0
5.0
5.0
BVCEO
IC=200mA
40
60
80
VCE(SAT)
IC=10A, IB=1.0A
0.75
0.75
1.0
VCE(SAT)
IC=15A, IB=1.5A
1.0
1.0
1.5
VCE(SAT)
IC=20A, IB=2.0A
2.0
2.0
VCE(SAT)
IC=20A, IB=4.0A
2.0
VCE(SAT)
IC=30A, IB=6.0A
4.0
4.0
VBE(SAT)
IC=10A, IB=1.0A
1.6
1.6
1.7
VBE(SAT)
IC=15A, IB=1.5A
1.85
1.85
2.0
VBE(SAT)
IC=20A, IB=2.0A
2.5
2.5
VBE(SAT)
IC=20A, IB=4.0A
2.5
VBE(ON)
VCE=2.0V, IC=10A
1.5
VBE(ON)
VCE=2.0V, IC=15A
1.7
1.7
VBE(ON)
VCE=4.0V, IC=20A
2.5
VBE(ON)
VCE=4.0V, IC=30A
3.0
3.0
-
UNITS
V
V
V
A
A
A
A
W
W
°C
°C/W
°C/W
UNITS
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
R0 (30-July 2012)
2N4398
2N4399
2N5745
PNP SILICON
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
2N4398
2N4399
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
hFE
VCE=2.0V, IC=1.0A
40
40
hFE
VCE=2.0V, IC=10A
hFE
VCE=2.0V, IC=15A
15
60
15
60
hFE
VCE=2.0V, IC=20A
hFE
VCE=4.0V, IC=30A
5.0
5.0
hfe
VCE=10V, IC=1.0A, f=1.0kHz
40
40
fT
VCE=10V, IC=1.0A, f=1.0MHz
4.0
4.0
tr
VCC=30V, IC=10A, IB1=IB2=1.0A
0.4
0.4
ts
VCC=30V, IC=10A, IB1=IB2=1.0A
1.5
1.5
tf
VCC=30V, IC=10A, IB1=IB2=1.0A
0.6
0.6
2N5745
MIN MAX
40
15
60
5.0
40
2.0
1.0
2.0
1.0
UNITS
MHz
μs
μs
μs
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R0 (30-July 2012)
w w w. c e n t r a l s e m i . c o m
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• Customer specific screening
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• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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